absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 55 i d @ v gs = 12v, t c = 100c continuous drain current 35 i dm pulsed drain current ? 220 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 380 mj i ar avalanche current ? 55 a e ar repetitive avalanche energy ? 30 mj dv/dt p eak diode recovery dv/dt ? 9.2 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 3.3 (typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened irhna57260 power mosfet surface mount (smd-2) 01/30/03 www.irf.com 1 200v, n-channel technology smd-2 product summary part number radiation level r ds(on) i d irhna57260 100k rads (si) 0.043 55a irhna53260 300k rads (si) 0.043 55a irhna54260 600k rads (si) 0.043 55a irhna58260 1000k rads (si) 0.048 55a features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton t olerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight for footnotes refer to the last page pd - 91838e downloaded from: http:///
irhna57260 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 200 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.22 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.043 v gs = 12v, i d = 35a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 40 s ( ) v ds > 15v, i ds = 35a ? i dss zero gate voltage drain current 10 v ds = 160v ,v gs =0v 2 5 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 175 v gs =12v, i d = 55a q gs gate-to-source charge 40 nc v ds = 100v q gd gate-to-drain (miller) charge 65 t d (on) turn-on delay time 35 v dd = 100v, i d = 55a, t r rise time 125 v gs =12v, r g = 2.35 t d (off) turn-off delay time 80 t f fall time 50 l s + l d total inductance 4.0 c iss input capacitance 7900 v gs = 0v, v ds = 25v c oss output capacitance 910 p f f = 1.0mhz c rss reverse transfer capacitance 70 na ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.42 r thj-pcb junction-to-pc board 1.6 soldered to a 2 square copper-clad board c/w measured from the center of drain pad to center of source pad note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 55 i sm pulse source current (body diode) ? 220 v sd diode forward voltage 1.2 v t j = 25c, i s = 55a, v gs = 0v ? t rr reverse recovery time 450 ns t j = 25c, i f = 55a, di/dt 100a/ s q rr reverse recovery charge 7.0 cv dd 25v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a downloaded from: http:///
www.irf.com 3 irhna57260 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 200 200 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 10 25 a v ds =160v, v gs =0v r ds(on) static drain-to-source ? 0.044 0.049 v gs = 12v, i d =35a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.043 0.048 v gs = 12v, i d =35a on-state resistance (smd-2) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhna57260, irhna53260 and irhna542602. part number irhna58260 fig a. single event effect, safe operating area v sd diode forward voltage ? 1.2 1.2 v v gs = 0v, i s = 55a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 200 200 150 100 50 i 59.8 341 32.5 200 100 40 35 30 au 82.3 350 28.4 50 35 25 0 50 100 150 200 250 0 -5 -10 -15 -20 vgs vds br i au downloaded from: http:///
irhna57260 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20 s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 55a downloaded from: http:///
www.irf.com 5 irhna57260 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage pre-irradiation 1 10 100 0 2000 4000 6000 8000 10000 12000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c rss c oss c iss 0 50 100 150 200 250 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 55 a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds, drain-to-source voltage (v) 0.1 1 10 100 1000 i d , drain current (a) 10us 100us 1ms 10ms tc = 25c tj = 150c single pulse operation in this area limited by r ds(on) downloaded from: http:///
irhna57260 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d v gs downloaded from: http:///
www.irf.com 7 irhna57260 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v . pre-irradiation 25 50 75 100 125 150 0 200 400 600 800 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 25a 35a 55a v gs downloaded from: http:///
irhna57260 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 50v, starting t j = 25c, l= 0.25 mh peak i l = 55a, v gs = 12v ? i sd 55a, di/dt 120a/ s, v dd 200v, t j 150c footnotes: case outline and dimensions smd-2 pad assignments ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 01/03 downloaded from: http:///
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